HUF75321D3ST
vs
HUFA76429D3ST-F085
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Transferred
|
End Of Life
|
Ihs Manufacturer |
INTERSIL CORP
|
ONSEMI
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
60 V
|
Drain Current-Max (ID) |
20 A
|
20 A
|
Drain-source On Resistance-Max |
0.036 Ω
|
0.029 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252AA
|
TO-252AA
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
55 W
|
110 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn) - annealed
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
4
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
TO-252 3L (DPAK)
|
Package Description |
|
ROHS COMPLIANT PACKAGE-3
|
Manufacturer Package Code |
|
369AS
|
Factory Lead Time |
|
4 Weeks
|
Samacsys Manufacturer |
|
onsemi
|
Additional Feature |
|
ULTRA-LOW RESISTANCE
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare HUF75321D3ST with alternatives
Compare HUFA76429D3ST-F085 with alternatives