HUF75309D3ST
vs
NTD18N06
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
ON SEMICONDUCTOR
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
60 V
Drain Current-Max (ID)
17 A
18 A
Drain-source On Resistance-Max
0.07 Ω
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
45 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
80 ns
Turn-on Time-Max (ton)
70 ns
Base Number Matches
1
13
Rohs Code
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Manufacturer Package Code
CASE 369C-01
Avalanche Energy Rating (Eas)
72 mJ
JESD-609 Code
e0
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
235
Power Dissipation-Max (Abs)
1.5 W
Pulsed Drain Current-Max (IDM)
54 A
Terminal Finish
TIN LEAD
Compare HUF75309D3ST with alternatives
Compare NTD18N06 with alternatives