HUF75309D3S
vs
IRFR024NTR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
55 V
Drain Current-Max (ID)
19 A
17 A
Drain-source On Resistance-Max
0.07 Ω
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
55 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
9
Part Package Code
TO-252AA
Package Description
DPAK-3
Pin Count
3
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
71 mJ
Peak Reflow Temperature (Cel)
245
Power Dissipation Ambient-Max
38 W
Pulsed Drain Current-Max (IDM)
68 A
Time@Peak Reflow Temperature-Max (s)
30
Compare HUF75309D3S with alternatives
Compare IRFR024NTR with alternatives