HSU83TRF vs BAS321 feature comparison

HSU83TRF Hitachi Ltd

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BAS321 NXP Semiconductors

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer HITACHI LTD NXP SEMICONDUCTORS
Package Description R-PDSO-G2 PLASTIC, SC-76, 2 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 1 V
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Non-rep Pk Forward Current-Max 2 A 9 A
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 150 °C
Output Current-Max 0.1 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 100 µA
Reverse Recovery Time-Max 0.1 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 5
Pbfree Code Yes
Rohs Code Yes
Part Package Code SC-76
Pin Count 2
Samacsys Manufacturer NXP
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Phases 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.3 W
Rep Pk Reverse Voltage-Max 250 V
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30

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