HSU83
vs
BAS321T/R
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
HITACHI LTD
NXP SEMICONDUCTORS
Package Description
R-PDSO-G2
R-PDSO-G2
Pin Count
2
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
JESD-30 Code
R-PDSO-G2
R-PDSO-G2
Non-rep Pk Forward Current-Max
2 A
Number of Elements
1
1
Number of Phases
1
Number of Terminals
2
2
Operating Temperature-Max
125 °C
150 °C
Output Current-Max
0.1 A
0.25 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
300 V
250 V
Reverse Recovery Time-Max
0.1 µs
0.05 µs
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
Pbfree Code
Rohs Code
Part Package Code
SC-76
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max
0.3 W
Terminal Finish
Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
40
Compare HSU83 with alternatives
Compare BAS321T/R with alternatives