HSC277
vs
BA891T/R
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
HITACHI LTD
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-F2
|
R-PDSO-F2
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.60
|
8541.10.00.60
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Max |
1.2 pF
|
1.05 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
MIXER DIODE
|
MIXER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1 V
|
| Frequency Band |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
VERY HIGH FREQUENCY
|
| JESD-30 Code |
R-PDSO-F2
|
R-PDSO-F2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
60 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.15 W
|
0.715 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
35 V
|
35 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
PLANAR DOPED BARRIER
|
PLANAR DOPED BARRIER
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
1
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
SC-79
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-65 °C
|
| Output Current-Max |
|
0.1 A
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare HSC277 with alternatives
Compare BA891T/R with alternatives