HS2MAE3G
vs
US2M
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
| Package Description |
SMA, 2 PIN
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
|
| Application |
EFFICIENCY
|
GENERAL PURPOSE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.7 V
|
1.7 V
|
| JEDEC-95 Code |
DO-214AC
|
|
| JESD-30 Code |
R-PDSO-C2
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
50 A
|
50 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
1.5 A
|
2 A
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
250
|
260
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Recovery Time-Max |
0.075 µs
|
0.075 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
C BEND
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
1
|
14
|
|
|
|
Compare HS2MAE3G with alternatives
Compare US2M with alternatives