HS2DALHM2G vs RN2Z(Z) feature comparison

HS2DALHM2G Taiwan Semiconductor

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RN2Z(Z) Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Date Of Intro 2020-06-05
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 0.92 V
JESD-30 Code R-PDSO-F2 O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 60 A 60 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 2 A 2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) 260 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES NO
Terminal Finish MATTE TIN
Terminal Form FLAT WIRE
Terminal Position DUAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 2
JEDEC-95 Code DO-15

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