HS2DALHM2G
vs
RN2Z(Z)
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Date Of Intro
2020-06-05
Additional Feature
FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
Application
EFFICIENCY
GENERAL PURPOSE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
0.92 V
JESD-30 Code
R-PDSO-F2
O-PALF-W2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
60 A
60 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
2 A
2 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
LONG FORM
Peak Reflow Temperature (Cel)
260
260
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Current-Max
1 µA
Reverse Recovery Time-Max
0.05 µs
0.05 µs
Surface Mount
YES
NO
Terminal Finish
MATTE TIN
Terminal Form
FLAT
WIRE
Terminal Position
DUAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
1
2
JEDEC-95 Code
DO-15
Compare HS2DALHM2G with alternatives
Compare RN2Z(Z) with alternatives