HS1KLWH vs GS1KTR feature comparison

HS1KLWH Taiwan Semiconductor

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GS1KTR Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description SOD-123W, 2 PIN R-PDSO-C2
Reach Compliance Code not_compliant compliant
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.7 V 1.1 V
JESD-30 Code R-PDSO-F2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 800 V 800 V
Reverse Current-Max 1 µA 5 µA
Reverse Recovery Time-Max 0.075 µs 2.5 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.80
Date Of Intro 2019-04-04
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Test Voltage 800 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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