HS1GFSM2G vs HS1GALHM2G feature comparison

HS1GFSM2G Taiwan Semiconductor

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HS1GALHM2G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
Application EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.3 V
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 35 A 35 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 1 µA 1 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Date Of Intro 2020-06-05
Reference Standard AEC-Q101

Compare HS1GFSM2G with alternatives

Compare HS1GALHM2G with alternatives