HS1GF3G vs US1G-M3/61T feature comparison

HS1GF3G Taiwan Semiconductor

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US1G-M3/61T Vishay Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY SEMICONDUCTORS
Package Description GREEN, PLASTIC, FOLDED SMA, 2 PIN R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application GENERAL PURPOSE EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 2
Additional Feature FREE WHEELING DIODE
Breakdown Voltage-Min 400 V
Forward Voltage-Max (VF) 1 V
Reverse Current-Max 10 µA
Reverse Test Voltage 400 V

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Compare US1G-M3/61T with alternatives