HS1GALHM3G
vs
AM01
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
ALLEGRO MICROSYSTEMS LLC
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Date Of Intro |
2020-06-05
|
|
Additional Feature |
FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
|
|
Application |
EFFICIENCY
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.3 V
|
0.98 V
|
JESD-30 Code |
R-PDSO-F2
|
O-XALF-W2
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Non-rep Pk Forward Current-Max |
35 A
|
35 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-40 °C
|
Output Current-Max |
1 A
|
1 A
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
SMALL OUTLINE
|
LONG FORM
|
Peak Reflow Temperature (Cel) |
260
|
|
Reference Standard |
AEC-Q101
|
|
Rep Pk Reverse Voltage-Max |
400 V
|
400 V
|
Reverse Current-Max |
1 µA
|
|
Reverse Recovery Time-Max |
0.05 µs
|
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
MATTE TIN
|
TIN LEAD
|
Terminal Form |
FLAT
|
WIRE
|
Terminal Position |
DUAL
|
AXIAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Base Number Matches |
1
|
4
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
AXIAL DIODE
|
Package Description |
|
AXIAL PACKAGE-2
|
Pin Count |
|
2
|
Case Connection |
|
ISOLATED
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare HS1GALHM3G with alternatives
Compare AM01 with alternatives