HS1DLRF
vs
NTE649D
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
NTE ELECTRONICS INC
|
| Package Description |
R-PDSO-F2
|
R-PDSO-C2
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
|
| Additional Feature |
LOW POWER LOSS
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
R-PDSO-F2
|
R-PDSO-C2
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
30 A
|
30 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
| Reverse Recovery Time-Max |
0.05 µs
|
0.15 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
FLAT
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
| Base Number Matches |
1
|
1
|
| Application |
|
GENERAL PURPOSE
|
| Forward Voltage-Max (VF) |
|
1.3 V
|
| JEDEC-95 Code |
|
DO-214AC
|
| Power Dissipation-Max |
|
1.19 W
|
| Reverse Current-Max |
|
5 µA
|
|
|
|
Compare HS1DLRF with alternatives
Compare NTE649D with alternatives