HS1DALHM3G vs MURS120-W feature comparison

HS1DALHM3G Taiwan Semiconductor

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MURS120-W Rectron Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD RECTRON LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Date Of Intro 2020-06-05
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE HIGH RELIABILITY
Application EFFICIENCY ULTRA FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 0.875 V
JESD-30 Code R-PDSO-F2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 35 A 35 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 1 µA 2 µA
Reverse Recovery Time-Max 0.05 µs 0.025 µs
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
JEDEC-95 Code DO-214AA
Reverse Test Voltage 200 V

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