HN1D01FU(TE85L,F) vs HN1D01FUTE85R feature comparison

HN1D01FU(TE85L,F) Toshiba America Electronic Components

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HN1D01FUTE85R Toshiba America Electronic Components

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP TOSHIBA CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Samacsys Manufacturer Toshiba
Application ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Configuration 2 BANKS, COMMON ANODE, 2 ELEMENTS 2 BANKS, COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 1.2 V
JESD-30 Code R-PDSO-G6 R-PDSO-G6
Non-rep Pk Forward Current-Max 2 A 2 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 6 6
Operating Temperature-Max 125 °C 125 °C
Output Current-Max 0.1 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Power Dissipation-Max 0.2 W 0.2 W
Rep Pk Reverse Voltage-Max 85 V 85 V
Reverse Current-Max 0.5 µA 0.5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 80 V 80 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Qualification Status Not Qualified