HM6708P-20
vs
5962-8868105LA
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
RENESAS TECHNOLOGY CORP
|
QP SEMICONDUCTOR INC
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
DIP,
|
DIP,
|
| Pin Count |
24
|
24
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
20 ns
|
25 ns
|
| JESD-30 Code |
R-PDIP-T24
|
R-GDIP-T24
|
| Length |
29.88 mm
|
|
| Memory Density |
262144 bit
|
262144 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
4
|
4
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
24
|
24
|
| Number of Words |
65536 words
|
65536 words
|
| Number of Words Code |
64000
|
64000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Organization |
64KX4
|
64KX4
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.08 mm
|
5.08 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
BICMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
MILITARY
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
7.62 mm
|
7.62 mm
|
| Base Number Matches |
2
|
5
|
| Additional Feature |
|
TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY
|
| JESD-609 Code |
|
e0
|
| Screening Level |
|
MIL-STD-883
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare HM6708P-20 with alternatives
Compare 5962-8868105LA with alternatives