HM3E-65764N-9
vs
HM1E-65764N-2
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TEMIC SEMICONDUCTORS
|
MATRA MHS
|
| Package Description |
DIP-28
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| Access Time-Max |
55 ns
|
55 ns
|
| I/O Type |
COMMON
|
|
| JESD-30 Code |
R-PDIP-T28
|
R-GDIP-T28
|
| JESD-609 Code |
e0
|
|
| Memory Density |
65536 bit
|
65536 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
28
|
28
|
| Number of Words |
8192 words
|
8192 words
|
| Number of Words Code |
8000
|
8000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
125 °C
|
| Operating Temperature-Min |
-40 °C
|
-55 °C
|
| Organization |
8KX8
|
8KX8
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Output Enable |
YES
|
YES
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP28,.6
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Standby Current-Max |
0.02 A
|
|
| Standby Voltage-Min |
4.5 V
|
|
| Supply Current-Max |
0.125 mA
|
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
MILITARY
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
3
|
| ECCN Code |
|
3A001.A.2.C
|
| HTS Code |
|
8542.32.00.41
|
| Screening Level |
|
MIL-STD-883
|
|
|
|
Compare HM3E-65764N-9 with alternatives
Compare HM1E-65764N-2 with alternatives