HM3E-65756M-A
vs
5962-8855209XA
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
MATRA MHS
PYRAMID SEMICONDUCTOR CORP
Package Description
,
DIP, DIP28,.6
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
45 ns
45 ns
JESD-30 Code
R-PDIP-T28
R-GDIP-T28
Memory Density
262144 bit
262144 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
8
8
Number of Functions
1
1
Number of Ports
1
Number of Terminals
28
28
Number of Words
32768 words
32768 words
Number of Words Code
32000
32000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-40 °C
-55 °C
Organization
32KX8
32KX8
Output Characteristics
3-STATE
3-STATE
Output Enable
YES
Package Body Material
PLASTIC/EPOXY
CERAMIC, GLASS-SEALED
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Screening Level
MIL-STD-883
38535Q/M;38534H;883B
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
AUTOMOTIVE
MILITARY
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
1
6
Part Package Code
DIP
Pin Count
28
I/O Type
COMMON
JESD-609 Code
e0
Package Equivalence Code
DIP28,.6
Standby Current-Max
0.00035 A
Standby Voltage-Min
2 V
Supply Current-Max
0.135 mA
Terminal Finish
TIN LEAD
Terminal Pitch
2.54 mm
Compare HM3E-65756M-A with alternatives
Compare 5962-8855209XA with alternatives