HM3-6504S-9+
vs
5962-8751307VA
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
TELEDYNE E2V (UK) LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| JESD-609 Code |
e0
|
e0
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Base Number Matches |
2
|
3
|
| Part Package Code |
|
DIP
|
| Package Description |
|
DIP, DIP18,.3
|
| Pin Count |
|
18
|
| Access Time-Max |
|
25 ns
|
| I/O Type |
|
COMMON
|
| JESD-30 Code |
|
R-GDIP-T18
|
| Memory Density |
|
4096 bit
|
| Memory IC Type |
|
STANDARD SRAM
|
| Memory Width |
|
4
|
| Number of Functions |
|
1
|
| Number of Terminals |
|
18
|
| Number of Words |
|
1024 words
|
| Number of Words Code |
|
1000
|
| Operating Mode |
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Organization |
|
1KX4
|
| Output Characteristics |
|
3-STATE
|
| Package Body Material |
|
CERAMIC, GLASS-SEALED
|
| Package Code |
|
DIP
|
| Package Equivalence Code |
|
DIP18,.3
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
IN-LINE
|
| Parallel/Serial |
|
PARALLEL
|
| Qualification Status |
|
Qualified
|
| Screening Level |
|
MIL-STD-883
|
| Standby Current-Max |
|
0.01 A
|
| Standby Voltage-Min |
|
4.5 V
|
| Supply Current-Max |
|
0.11 mA
|
| Supply Voltage-Max (Vsup) |
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
|
5 V
|
| Surface Mount |
|
NO
|
| Technology |
|
CMOS
|
| Temperature Grade |
|
MILITARY
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Pitch |
|
2.54 mm
|
| Terminal Position |
|
DUAL
|
|
|
|
Compare HM3-6504S-9+ with alternatives
Compare 5962-8751307VA with alternatives