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HM1E-65664AS-9 vs HM1E-65664AB-2 feature comparison

HM1E-65664AS-9 Matra MHS

Buy Now Datasheet

HM1E-65664AB-2 Temic Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MATRA MHS TEMIC SEMICONDUCTORS
Package Description ,
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8542.32.00.41
Access Time-Max 45 ns 45 ns
JESD-30 Code R-GDIP-T28 R-GDIP-T28
Memory Density 65536 bit 65536 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 8 8
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 28 28
Number of Words 8192 words 8192 words
Number of Words Code 8000 8000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 125 °C
Operating Temperature-Min -40 °C -55 °C
Organization 8KX8 8KX8
Output Characteristics 3-STATE 3-STATE
Output Enable YES YES
Package Body Material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Voltage-Min 2 V 2 V
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade INDUSTRIAL MILITARY
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 3 3
Rohs Code No
I/O Type COMMON
JESD-609 Code e0
Package Equivalence Code DIP28,.6
Standby Current-Max 0.00002 A
Supply Current-Max 0.075 mA
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Pitch 2.54 mm
Memory » SRAMs
Memory » SRAMs

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