HM1E-65664AB-5
vs
HM3E-65664AS-6
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
TEMIC SEMICONDUCTORS
MATRA MHS
Reach Compliance Code
unknown
unknown
Access Time-Max
45 ns
JESD-30 Code
R-GDIP-T28
R-PDIP-T28
Memory Density
65536 bit
65536 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
8
8
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
28
28
Number of Words
8192 words
8192 words
Number of Words Code
8000
8000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
8KX8
8KX8
Output Characteristics
3-STATE
3-STATE
Output Enable
YES
YES
Package Body Material
CERAMIC, GLASS-SEALED
PLASTIC/EPOXY
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Standby Voltage-Min
2 V
2 V
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
3
1
Package Description
,
ECCN Code
EAR99
HTS Code
8542.32.00.41
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