HM1-6518/883
vs
HM1-6518B/883
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
HARRIS SEMICONDUCTOR
Package Description
DIP, DIP18,.3
DIP, DIP18,.3
Reach Compliance Code
unknown
unknown
ECCN Code
3A001.A.2.C
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
250 ns
180 ns
Additional Feature
ADDRESS LATCH; LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS
ADDRESS LATCH; LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS
JESD-30 Code
R-GDIP-T18
R-GDIP-T18
JESD-609 Code
e0
e0
Memory Density
1024 bit
1024 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
1
1
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
18
18
Number of Words
1024 words
1024 words
Number of Words Code
1000
1000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Organization
1KX1
1KX1
Output Characteristics
3-STATE
3-STATE
Output Enable
NO
NO
Package Body Material
CERAMIC, GLASS-SEALED
CERAMIC, GLASS-SEALED
Package Code
DIP
DIP
Package Equivalence Code
DIP18,.3
DIP18,.3
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Screening Level
38535Q/M;38534H;883B
38535Q/M;38534H;883B
Standby Current-Max
0.00001 A
0.000005 A
Standby Voltage-Min
2 V
2 V
Supply Current-Max
0.0068 mA
0.0079 mA
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
MILITARY
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
2.54 mm
Terminal Position
DUAL
DUAL
Base Number Matches
3
3
Compare HM1-6518/883 with alternatives
Compare HM1-6518B/883 with alternatives