HM1-6514-9
vs
MWS5114D1X
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
INTERSIL CORP
|
| Package Description |
DIP, DIP18,.3
|
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
300 ns
|
300 ns
|
| Additional Feature |
ADDRESS LATCH; LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS
|
|
| I/O Type |
COMMON
|
COMMON
|
| JESD-30 Code |
R-GDIP-T18
|
R-XDIP-T18
|
| JESD-609 Code |
e0
|
e0
|
| Memory Density |
4096 bit
|
4096 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
4
|
4
|
| Number of Functions |
1
|
|
| Number of Ports |
1
|
|
| Number of Terminals |
18
|
18
|
| Number of Words |
1024 words
|
1024 words
|
| Number of Words Code |
1000
|
1000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
70 °C
|
| Operating Temperature-Min |
-40 °C
|
|
| Organization |
1KX4
|
1KX4
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Output Enable |
NO
|
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP18,.3
|
DIP18,.3
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
|
| Standby Current-Max |
0.000015 A
|
0.000125 A
|
| Standby Voltage-Min |
2 V
|
2 V
|
| Supply Current-Max |
0.014 mA
|
0.008 mA
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
| Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
4
|
3
|
|
|
|
Compare HM1-6514-9 with alternatives