HGTP7N60B3D vs HGTD7N60B3S feature comparison

HGTP7N60B3D Harris Semiconductor

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HGTD7N60B3S Fairchild Semiconductor Corporation

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR FAIRCHILD SEMICONDUCTOR CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 14 A 14 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Fall Time-Max (tf) 80 ns 175 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-220AB TO-252AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 60 W 60 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 5 4
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Transistor Application MOTOR CONTROL
Turn-off Time-Nom (toff) 350 ns
Turn-on Time-Nom (ton) 46 ns

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