HGTP3N60A4D vs SKW25N120 feature comparison

HGTP3N60A4D Fairchild Semiconductor Corporation

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SKW25N120 Infineon Technologies AG

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Part Package Code TO-220 TO-247AC
Package Description FLANGE MOUNT, R-PSFM-T3 GREEN, PLASTIC PACKAGE-3
Pin Count 3 3
Manufacturer Package Code TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 17 A 46 A
Collector-Emitter Voltage-Max 600 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 100 ns 26 ns
Gate-Emitter Thr Voltage-Max 7 V 5 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-220AB TO-247AC
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 70 W 313 W
Qualification Status Not Qualified Not Qualified
Rise Time-Max (tr) 15 ns 24 ns
Surface Mount NO NO
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 180 ns 862 ns
Turn-on Time-Nom (ton) 17.5 ns 86 ns
Base Number Matches 4 1
Samacsys Manufacturer Infineon
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare SKW25N120 with alternatives