HGTP2N120CN
vs
HGTP7N60A4
feature comparison
Part Life Cycle Code |
Transferred
|
End Of Life
|
Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
ONSEMI
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW CONDUCTION LOSS
|
LOW CONDUCTION LOSS
|
Collector Current-Max (IC) |
2 A
|
34 A
|
Collector-Emitter Voltage-Max |
1200 V
|
600 V
|
Configuration |
SINGLE
|
SINGLE
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
4
|
4
|
Pbfree Code |
|
Yes
|
Package Description |
|
TO-220AB, 3 PIN
|
Manufacturer Package Code |
|
340AT
|
Factory Lead Time |
|
4 Weeks
|
Samacsys Manufacturer |
|
onsemi
|
Case Connection |
|
COLLECTOR
|
Fall Time-Max (tf) |
|
85 ns
|
Gate-Emitter Thr Voltage-Max |
|
7 V
|
Gate-Emitter Voltage-Max |
|
20 V
|
JESD-609 Code |
|
e3
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max (Abs) |
|
125 W
|
Terminal Finish |
|
MATTE TIN
|
Turn-off Time-Max (toff) |
|
235 ns
|
Turn-off Time-Nom (toff) |
|
205 ns
|
Turn-on Time-Nom (ton) |
|
17 ns
|
VCEsat-Max |
|
2.7 V
|
|
|
|
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