HGTG30N60B3
vs
APT30GT60BRD
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
MICROSEMI CORP
|
| Package Description |
PLASTIC PACKAGE-3
|
,
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
60 A
|
55 A
|
| Collector-Emitter Voltage-Max |
600 V
|
600 V
|
| Configuration |
SINGLE
|
|
| Fall Time-Max (tf) |
150 ns
|
95 ns
|
| Gate-Emitter Thr Voltage-Max |
6 V
|
5 V
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JEDEC-95 Code |
TO-247
|
|
| JESD-30 Code |
R-PSFM-T3
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
208 W
|
260 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
4
|
2
|
| Part Package Code |
|
TO-247
|
| Pin Count |
|
3
|
| Rise Time-Max (tr) |
|
40 ns
|
|
|
|