HGTG20N120CN
vs
HGTP12N60D1
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
INTERSIL CORP
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOW CONDUCTION LOSS, AVALANCHE RATED
Collector Current-Max (IC)
63 A
21 A
Collector-Emitter Voltage-Max
1200 V
600 V
Configuration
SINGLE
SINGLE
Fall Time-Max (tf)
400 ns
600 ns
Gate-Emitter Voltage-Max
20 V
25 V
JEDEC-95 Code
TO-247
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
390 W
75 W
Qualification Status
Not Qualified
Not Qualified
Rise Time-Max (tr)
22 ns
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
MOTOR CONTROL
MOTOR CONTROL
Transistor Element Material
SILICON
SILICON
Turn-off Time-Nom (toff)
565 ns
430 ns
Turn-on Time-Nom (ton)
38 ns
100 ns
Base Number Matches
3
3
Case Connection
COLLECTOR
Gate-Emitter Thr Voltage-Max
6 V
Compare HGTG20N120CN with alternatives
Compare HGTP12N60D1 with alternatives