HGTG20N120CN vs HGTP12N60D1 feature comparison

HGTG20N120CN Fairchild Semiconductor Corporation

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HGTP12N60D1 Intersil Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INTERSIL CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS, AVALANCHE RATED
Collector Current-Max (IC) 63 A 21 A
Collector-Emitter Voltage-Max 1200 V 600 V
Configuration SINGLE SINGLE
Fall Time-Max (tf) 400 ns 600 ns
Gate-Emitter Voltage-Max 20 V 25 V
JEDEC-95 Code TO-247 TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 390 W 75 W
Qualification Status Not Qualified Not Qualified
Rise Time-Max (tr) 22 ns
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 565 ns 430 ns
Turn-on Time-Nom (ton) 38 ns 100 ns
Base Number Matches 3 3
Case Connection COLLECTOR
Gate-Emitter Thr Voltage-Max 6 V

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Compare HGTP12N60D1 with alternatives