HGTG12N60C3D
vs
IRG4BC20UPBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOW CONDUCTION LOSS, HYPER FAST RECOVERY
ULTRA FAST
Collector Current-Max (IC)
24 A
13 A
Collector-Emitter Voltage-Max
600 V
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
Fall Time-Max (tf)
275000000000 ns
180 ns
Gate-Emitter Thr Voltage-Max
6 V
6 V
Gate-Emitter Voltage-Max
20 V
20 V
JEDEC-95 Code
TO-247
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
104 W
60 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
MOTOR CONTROL
POWER CONTROL
Transistor Element Material
SILICON
SILICON
Turn-off Time-Nom (toff)
270 ns
330 ns
Turn-on Time-Nom (ton)
14 ns
34 ns
Base Number Matches
4
2
Package Description
TO-220AB, 3 PIN
Date Of Intro
1996-08-01
Samacsys Manufacturer
Infineon
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
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