HGTG10N120BND vs HGTP12N60A4 feature comparison

HGTG10N120BND onsemi

Buy Now Datasheet

HGTP12N60A4 Intersil Corporation

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Pbfree Code Yes
Part Life Cycle Code End Of Life Transferred
Ihs Manufacturer ON SEMICONDUCTOR INTERSIL CORP
Part Package Code TO-247-3
Package Description FLANGE MOUNT, R-PSFM-T3
Manufacturer Package Code 340CK
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Collector Current-Max (IC) 35 A 54 A
Collector-Emitter Voltage-Max 1200 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
JEDEC-95 Code TO-247 TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 330 ns 180 ns
Turn-on Time-Nom (ton) 32 ns 33 ns
Base Number Matches 4 4
Rohs Code No
Case Connection COLLECTOR
Gate-Emitter Voltage-Max 20 V
Power Dissipation-Max (Abs) 167 W

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