HGTD7N60C3S9A vs IRG4BC15UD-S feature comparison

HGTD7N60C3S9A Fairchild Semiconductor Corporation

Buy Now Datasheet

IRG4BC15UD-S International Rectifier

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INTERNATIONAL RECTIFIER CORP
Part Package Code DPAK D2PAK
Package Description TO-252AA, 3 PIN SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 14 A 14 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 275 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 225
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 60 W 19 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 490 ns 400 ns
Turn-on Time-Nom (ton) 20 ns 37 ns
Base Number Matches 1 6

Compare HGTD7N60C3S9A with alternatives

Compare IRG4BC15UD-S with alternatives