HGT1S7N60C3DS
vs
IRG4BC20FDPBF
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
INTERSIL CORP
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW CONDUCTION LOSS
|
|
Case Connection |
COLLECTOR
|
COLLECTOR
|
Collector Current-Max (IC) |
14 A
|
16 A
|
Collector-Emitter Voltage-Max |
600 V
|
600 V
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
Fall Time-Max (tf) |
275 ns
|
|
Gate-Emitter Thr Voltage-Max |
6 V
|
6 V
|
Gate-Emitter Voltage-Max |
20 V
|
20 V
|
JEDEC-95 Code |
TO-263AB
|
TO-220AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
60 W
|
64 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
MOTOR CONTROL
|
POWER CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
490 ns
|
610 ns
|
Turn-on Time-Nom (ton) |
20 ns
|
63 ns
|
Base Number Matches |
3
|
2
|
Package Description |
|
LEAD FREE PACKAGE-3
|
Factory Lead Time |
|
4 Weeks
|
Samacsys Manufacturer |
|
Infineon
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare HGT1S7N60C3DS with alternatives
Compare IRG4BC20FDPBF with alternatives