HGT1S7N60C3DS vs IRG4BC20FDPBF feature comparison

HGT1S7N60C3DS Intersil Corporation

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IRG4BC20FDPBF Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERSIL CORP INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 14 A 16 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 275 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 60 W 64 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 490 ns 610 ns
Turn-on Time-Nom (ton) 20 ns 63 ns
Base Number Matches 3 2
Package Description LEAD FREE PACKAGE-3
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare HGT1S7N60C3DS with alternatives

Compare IRG4BC20FDPBF with alternatives