HGT1S5N120BNS9A
vs
SGW6N60UFD
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
SAMSUNG SEMICONDUCTOR INC
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW CONDUCTION LOSS, AVALANCHE RATED
|
HIGH SPEED SWITCHING
|
Case Connection |
COLLECTOR
|
|
Collector Current-Max (IC) |
21 A
|
6 A
|
Collector-Emitter Voltage-Max |
1200 V
|
600 V
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
Fall Time-Max (tf) |
200 ns
|
280 ns
|
Gate-Emitter Voltage-Max |
20 V
|
20 V
|
JEDEC-95 Code |
TO-263AB
|
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
167 W
|
30 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rise Time-Max (tr) |
20 ns
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
MOTOR CONTROL
|
MOTOR CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
357 ns
|
120 ns
|
Turn-on Time-Nom (ton) |
35 ns
|
37 ns
|
Base Number Matches |
2
|
2
|
Part Package Code |
|
D2PAK
|
Pin Count |
|
3
|
Gate-Emitter Thr Voltage-Max |
|
7.5 V
|
|
|
|
Compare HGT1S5N120BNS9A with alternatives
Compare SGW6N60UFD with alternatives