HGT1S3N60B3S vs APT30GT60BRD feature comparison

HGT1S3N60B3S Fairchild Semiconductor Corporation

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APT30GT60BRD Microsemi Corporation

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP MICROSEMI CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 7 A 55 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE
Fall Time-Max (tf) 175 ns 95 ns
Gate-Emitter Thr Voltage-Max 6 V 5 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 33.3 W 260 W
Qualification Status Not Qualified
Surface Mount YES NO
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 335 ns
Turn-on Time-Nom (ton) 34 ns
Base Number Matches 4 2
Part Package Code TO-247
Package Description ,
Pin Count 3
Rise Time-Max (tr) 40 ns

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