HGT1S20N60C3R
vs
HGT1S20N60C3R
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
INTERSIL CORP
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
|
|
Case Connection |
COLLECTOR
|
|
Collector Current-Max (IC) |
40 A
|
40 A
|
Collector-Emitter Voltage-Max |
600 V
|
600 V
|
Configuration |
SINGLE
|
|
Fall Time-Max (tf) |
400 ns
|
400 ns
|
Gate-Emitter Thr Voltage-Max |
7.5 V
|
7.5 V
|
Gate-Emitter Voltage-Max |
20 V
|
20 V
|
JEDEC-95 Code |
TO-262AA
|
|
JESD-30 Code |
R-PSIP-T3
|
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
|
Number of Terminals |
3
|
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
IN-LINE
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
164 W
|
164 W
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
THROUGH-HOLE
|
|
Terminal Position |
SINGLE
|
|
Transistor Application |
MOTOR CONTROL
|
|
Transistor Element Material |
SILICON
|
|
Turn-off Time-Nom (toff) |
390 ns
|
|
Turn-on Time-Nom (ton) |
34 ns
|
|
Base Number Matches |
3
|
3
|
|
|
|