HGT1S12N60C3S vs HGTG12N60C3DR feature comparison

HGT1S12N60C3S Harris Semiconductor

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HGTG12N60C3DR Rochester Electronics LLC

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer HARRIS SEMICONDUCTOR ROCHESTER ELECTRONICS LLC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 24 A 24 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 275 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 104 W
Power Dissipation-Max (Abs) 104 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 400 ns
Turn-off Time-Nom (toff) 270 ns 290 ns
Turn-on Time-Nom (ton) 14 ns 36 ns
VCEsat-Max 2 V
Base Number Matches 3 4
Pbfree Code No
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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