HGT1S12N60C3S vs HGTD2N120CNS9A feature comparison

HGT1S12N60C3S Harris Semiconductor

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HGTD2N120CNS9A Fairchild Semiconductor Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS, AVALANCHE RATED
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 24 A 13 A
Collector-Emitter Voltage-Max 600 V 1200 V
Configuration SINGLE SINGLE
Fall Time-Max (tf) 275 ns 320 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 104 W
Power Dissipation-Max (Abs) 104 W 104 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 400 ns
Turn-off Time-Nom (toff) 270 ns 585 ns
Turn-on Time-Nom (ton) 14 ns 32 ns
VCEsat-Max 2 V
Base Number Matches 3 2
Rise Time-Max (tr) 15 ns

Compare HGT1S12N60C3S with alternatives

Compare HGTD2N120CNS9A with alternatives