HGT1S12N60B3S9A vs HGTP3N60A4D feature comparison

HGT1S12N60B3S9A Harris Semiconductor

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HGTP3N60A4D Fairchild Semiconductor Corporation

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 27 A 17 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 280 ns 180 ns
Turn-on Time-Nom (ton) 22 ns 17.5 ns
Base Number Matches 3 4
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-220
Pin Count 3
Manufacturer Package Code TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
HTS Code 8541.29.00.95
Fall Time-Max (tf) 100 ns
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JESD-609 Code e3
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 70 W
Rise Time-Max (tr) 15 ns
Terminal Finish MATTE TIN

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