HGT1S12N60B3S vs HGT1S3N60B3S feature comparison

HGT1S12N60B3S Intersil Corporation

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HGT1S3N60B3S Harris Semiconductor

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Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERSIL CORP HARRIS SEMICONDUCTOR
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 27 A 7 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
Fall Time-Max (tf) 175 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 104 W 33 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 392 ns 220 ns
Turn-on Time-Nom (ton) 45 ns 16 ns
Base Number Matches 4 4
Package Description PLASTIC PACKAGE-4

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