HGT1S12N60B3S vs IRG4BC20UPBF feature comparison

HGT1S12N60B3S Fairchild Semiconductor Corporation

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IRG4BC20UPBF Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS ULTRA FAST
Case Connection COLLECTOR
Collector Current-Max (IC) 27 A 13 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 104 W 60 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 392 ns 330 ns
Turn-on Time-Nom (ton) 45 ns 34 ns
Base Number Matches 2 1
Package Description TO-220AB, 3 PIN
Date Of Intro 1996-08-01
Samacsys Manufacturer Infineon
Fall Time-Max (tf) 180 ns
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare HGT1S12N60B3S with alternatives

Compare IRG4BC20UPBF with alternatives