HGT1S12N60B3S vs HGT1S12N60B3 feature comparison

HGT1S12N60B3S Fairchild Semiconductor Corporation

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HGT1S12N60B3 Harris Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP HARRIS SEMICONDUCTOR
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 27 A 27 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB TO-262AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 104 W 104 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 392 ns 280 ns
Turn-on Time-Nom (ton) 45 ns 22 ns
Base Number Matches 2 6
Package Description PLASTIC PACKAGE-3
Fall Time-Max (tf) 175 ns

Compare HGT1S12N60B3S with alternatives

Compare HGT1S12N60B3 with alternatives