HGT1S12N60A4DS9A vs IRGBC40U feature comparison

HGT1S12N60A4DS9A onsemi

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IRGBC40U International Rectifier

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ON SEMICONDUCTOR INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PSSO-G2 TO-220AB, 3 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 2017-11-08
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 54 A 40 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Fall Time-Max (tf) 95 ns 120 ns
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 167 W 160 W
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 265 ns
Turn-off Time-Nom (toff) 180 ns 314 ns
Turn-on Time-Nom (ton) 33 ns 48 ns
VCEsat-Max 2.7 V 3 V
Base Number Matches 3 1
Rohs Code No
Part Package Code TO-220AB
Pin Count 3
HTS Code 8541.29.00.95
Additional Feature ULTRA FAST
Gate-Emitter Thr Voltage-Max 5.5 V
JESD-609 Code e0
Power Dissipation Ambient-Max 160 W
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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