HGT1S12N60A4DS9A
vs
APT35GN120SG
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
MICROSEMI CORP
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2017-11-08
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
54 A
|
94 A
|
| Collector-Emitter Voltage-Max |
600 V
|
1200 V
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| Fall Time-Max (tf) |
95 ns
|
|
| Gate-Emitter Voltage-Max |
20 V
|
30 V
|
| JEDEC-95 Code |
TO-263AB
|
|
| JESD-30 Code |
R-PSSO-G2
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
167 W
|
379 W
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
POWER CONTROL
|
|
| Transistor Element Material |
SILICON
|
|
| Turn-off Time-Max (toff) |
265 ns
|
|
| Turn-off Time-Nom (toff) |
180 ns
|
|
| Turn-on Time-Nom (ton) |
33 ns
|
|
| VCEsat-Max |
2.7 V
|
|
| Base Number Matches |
3
|
2
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
Yes
|
| Gate-Emitter Thr Voltage-Max |
|
6.5 V
|
|
|
|