HGT1S12N60A4DS vs IRG4BC10KDPBF feature comparison

HGT1S12N60A4DS onsemi

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IRG4BC10KDPBF International Rectifier

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Pbfree Code Yes Yes
Part Life Cycle Code End Of Life Transferred
Ihs Manufacturer ONSEMI INTERNATIONAL RECTIFIER CORP
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 54 A 9 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 95 ns 210 ns
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 167 W 38 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - annealed MATTE TIN OVER NICKEL
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 265 ns
Turn-off Time-Nom (toff) 180 ns 410 ns
Turn-on Time-Nom (ton) 33 ns 78 ns
VCEsat-Max 2.7 V
Base Number Matches 2 1
Rohs Code Yes
Part Package Code TO-220AB
Package Description LEAD FREE PACKAGE-3
Pin Count 3
Additional Feature LOW CONDUCTION LOSS
Gate-Emitter Thr Voltage-Max 6.5 V

Compare HGT1S12N60A4DS with alternatives

Compare IRG4BC10KDPBF with alternatives