HGT1S12N60A4DS
vs
HGT1S12N60A4DS
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Transferred
|
End Of Life
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
ONSEMI
|
Part Package Code |
D2PAK
|
|
Pin Count |
2
|
|
Manufacturer Package Code |
2LD,TO263, SURFACE MOUNT
|
418AJ
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
LOW CONDUCTION LOSS
|
|
Case Connection |
COLLECTOR
|
COLLECTOR
|
Collector Current-Max (IC) |
54 A
|
54 A
|
Collector-Emitter Voltage-Max |
600 V
|
600 V
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
Fall Time-Max (tf) |
95 ns
|
95 ns
|
Gate-Emitter Voltage-Max |
20 V
|
20 V
|
JEDEC-95 Code |
TO-263AB
|
TO-263AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
167 W
|
167 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn)
|
Matte Tin (Sn) - annealed
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
180 ns
|
180 ns
|
Turn-on Time-Nom (ton) |
33 ns
|
33 ns
|
Base Number Matches |
4
|
2
|
Factory Lead Time |
|
4 Weeks
|
Samacsys Manufacturer |
|
onsemi
|
Operating Temperature-Min |
|
-55 °C
|
Turn-off Time-Max (toff) |
|
265 ns
|
VCEsat-Max |
|
2.7 V
|
|
|
|
Compare HGT1S12N60A4DS with alternatives
Compare HGT1S12N60A4DS with alternatives