HGT1S11N120CNS vs IRG4PC50KDPBF feature comparison

HGT1S11N120CNS Fairchild Semiconductor Corporation

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IRG4PC50KDPBF Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 43 A 52 A
Collector-Emitter Voltage-Max 1200 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 400 ns 140 ns
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-263AB TO-247AC
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 298 W 200 W
Qualification Status Not Qualified Not Qualified
Rise Time-Max (tr) 16 ns
Surface Mount YES NO
Terminal Finish TIN LEAD MATTE TIN OVER NICKEL
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 550 ns 245 ns
Turn-on Time-Nom (ton) 33 ns 112 ns
Base Number Matches 4 2
Date Of Intro 1997-09-02
Samacsys Manufacturer Infineon
Gate-Emitter Thr Voltage-Max 6 V
Operating Temperature-Min -55 °C
Turn-off Time-Max (toff) 360 ns
VCEsat-Max 2.2 V

Compare HGT1S11N120CNS with alternatives

Compare IRG4PC50KDPBF with alternatives