HFA1100MJ
vs
CLC505ASD
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
NATIONAL SEMICONDUCTOR CORP
|
| Package Description |
DIP, DIP8,.3
|
DIP, DIP8,.3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.33.00.01
|
8542.33.00.01
|
| Amplifier Type |
OPERATIONAL AMPLIFIER
|
OPERATIONAL AMPLIFIER
|
| Architecture |
CURRENT-FEEDBACK
|
CURRENT-FEEDBACK
|
| Bias Current-Max (IIB) @25C |
50 µA
|
38 µA
|
| Frequency Compensation |
YES
|
YES (AVCL>=2)
|
| Input Offset Voltage-Max |
10000 µV
|
14500 µV
|
| JESD-30 Code |
R-XDIP-T8
|
R-XDIP-T8
|
| JESD-609 Code |
e0
|
e0
|
| Low-Bias |
NO
|
|
| Low-Offset |
NO
|
NO
|
| Micropower |
NO
|
|
| Neg Supply Voltage-Nom (Vsup) |
-5 V
|
-5 V
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
CERAMIC
|
CERAMIC
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP8,.3
|
DIP8,.3
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Power |
NO
|
|
| Programmable Power |
NO
|
YES
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Slew Rate-Min |
1850 V/us
|
500 V/us
|
| Supply Current-Max |
33 mA
|
12 mA
|
| Supply Voltage Limit-Max |
6 V
|
7 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
BIPOLAR
|
BIPOLAR
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Wideband |
YES
|
YES
|
| Base Number Matches |
2
|
3
|
| Screening Level |
|
38535V;38534K;883S
|
|
|
|
Compare HFA1100MJ with alternatives