HER308G
vs
HER308GR0G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.7 V
|
1.7 V
|
| Non-rep Pk Forward Current-Max |
150 A
|
125 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
175 °C
|
150 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
| Reverse Recovery Time-Max |
0.075 µs
|
0.075 µs
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
21
|
1
|
| HTS Code |
|
8541.10.00.80
|
| Additional Feature |
|
HIGH RELIABILITY, LOW POWER LOSS
|
| Application |
|
EFFICIENCY
|
| Case Connection |
|
ISOLATED
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-201AD
|
| JESD-30 Code |
|
O-PALF-W2
|
| JESD-609 Code |
|
e3
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Reverse Current-Max |
|
10 µA
|
| Terminal Finish |
|
MATTE TIN
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare HER308G with alternatives
Compare HER308GR0G with alternatives