HER307GB0
vs
HER307GX0G
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Additional Feature |
HIGH RELIABILITY, LOW POWER LOSS
|
HIGH RELIABILITY, LOW POWER LOSS
|
Application |
EFFICIENCY
|
EFFICIENCY
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.7 V
|
1.7 V
|
JEDEC-95 Code |
DO-201AD
|
DO-201AD
|
JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
JESD-609 Code |
e3
|
e3
|
Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Output Current-Max |
3 A
|
3 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
Reverse Current-Max |
10 µA
|
10 µA
|
Reverse Recovery Time-Max |
0.075 µs
|
0.075 µs
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Matte Tin (Sn)
|
Matte Tin (Sn)
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
2
|
1
|
Package Description |
|
O-PALF-W2
|
|
|
|
Compare HER307GB0 with alternatives
Compare HER307GX0G with alternatives