HER307G
vs
BY254GA0G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Active
Ihs Manufacturer
JGD SEMICONDUCTORS CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY, LOW POWER LOSS
Application
EFFICIENCY
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.7 V
1 V
JEDEC-95 Code
DO-201AD
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
100 A
150 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
800 V
800 V
Reverse Current-Max
10 µA
5 µA
Reverse Recovery Time-Max
0.075 µs
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
23
1
Rohs Code
JESD-609 Code
e3
Peak Reflow Temperature (Cel)
260
Terminal Finish
TIN
Time@Peak Reflow Temperature-Max (s)
10
Compare HER307G with alternatives
Compare BY254GA0G with alternatives